AM29DL400B datasheet(41/47 Pages) AMD

Part #	AM29DL400B

Description	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

PDF	47 Pages

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Manufacturer	AMD [Advanced Micro Devices]

Direct Link	http://www.amd.com

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41 / 47 page

Am29DL400B

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following

conditions: 25

°C, 3.0 V VCC, 1,000,000 cycles.

Additionally, programming typicals assume

checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 2.7 V,

1,000,000 cycles.

3. The typical chip programming time is considerably less

than the maximum chip programming time listed, since

most bytes program faster than the maximum program

times listed.

4. In the pre-programming step of the Embedded Erase

algorithm, all bytes are programmed to 00h before

erasure.

5. System-level overhead is the time required to execute

the two- or four-bus-cycle sequence for the program

command. See Table 5 for further information on

command definitions.

6. The device has a guaranteed minimum erase and program

cycle endurance of 1,000,000 cycles.

Parameter

Typ (Note 1)

Max (Note

Unit

Comments

Sector Erase Time

0.7

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

sec

Byte Program Time

300

µs

Excludes system level

overhead (Note 5)

Word Program Time

360

µs

Chip Program Time

(Note 3)

Byte Mode

4.5

13.5

sec

Word Mode

2.9

8.7

AM29DL400B Datasheet(PDF) 41 Page - Advanced Micro Devices

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