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IXFN100N50P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN100N50P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1075 eq IXFN100N50P N-Channel MOSFET www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 90A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =49mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · High speed power switch ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage Continuous ± 30 V ID Drain Current-continuous@ TC=25℃ 90 A IDM Pulse Drain Current 250 A PD Total Dissipation@TC=25℃ 1040 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ VISOL Isolation Voltage 50/60 Hz, RMS 2500 V~ |
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