Technical Data

Data Sheet N2634, Rev.-



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

ST5045AX-D

ST5045AX-C

ST5045AX-D/ST5045AX-C SCHOTTKY BARRIER RECTIFIER

* Pulse width < 300 µs, duty cycle < 2%

Features

Circuit Diagram

Mechanical Data

Maximum Ratings(limiting values, at 25 °C unless otherwise specified)

Characteristics

Symbol

Condition

Max.

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

-

45

V

Average Rectified Forward Current

IF (AV)

Tc=100°C, In DC

50

A

Peak One Cycle Non-Repetitive Surge

Current

IFSM

8.3 ms, half Sine pulse

350

A

Electrical Characteristics:

Characteristics

Symbol

Condition

Typ.

Max.

Units

Forward Voltage Drop*

VF1

@ 50A, Pulse, TJ = 25 C

0.49

0.55

V

Reverse Current*

IR1

@VR = rated VR, TJ = 25 C

0.03

0.2

mA

IR2

@VR = rated VR, TJ = 100 C

-

20

mA

Junction Capacitance

CT

@VR = 5V, TC = 25 C

fSIG = 1MHz

5840

-

pF



Case: R-8 molded plastic body



Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026



Polarity: Color band denotes cathode end



Mounting Position: Any



Ultralow forward voltage drop



High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance



High frequency operation



Trench MOS Schottky technology



Terminals finish:Tin Lead-free plated



This is a Pb − Free Device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon request

R-8