PBYR1025CTD datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR1025CTD series

Schottky barrier

Fig.1. Maximum forward dissipation per diode

F = f(IF(AV)); square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation per diode

F = f(IF(AV)); sinusoidal current waveform where

a = form factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

per diode I

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

0123456

0.5

0.2

0.1

PBYR1025CTD

Rs = 0.03 Ohms

Vo = 0.25 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

D =

D = 1.0

Tmb(max) / C

150

147

144

141

138

100mA

10mA

1mA

100uA

10uA

Reverse current, IR (A)

Reverse voltage, VR (V)

50 C

75 C

100 C

125 C

PBYR1045CTD

Tj = 25 C

0123

0.5

1.5

2.5

a = 1.57

1.9

2.2

2.8

PBYR1025CTD

Rs = 0.03 Ohms

Vo = 0.25 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

147.75

145.5

143.25

141

138.75

136.5

100

1000

PBYR1025CTD

Reverse voltage, VR (V)

Junction capacitance, Cd (pF)

0.2

0.4

0.6

0.8

PBYR1025CTD

Forward voltage, VR (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYR1025CTD

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

February 1998

Rev 1.000

PBYR1025CTD Datasheet(PDF) 3 Page - NXP Semiconductors

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