PBYR1040CTD datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR1045CTD series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; per diode;

th j-mb = f(tp).

0123456

D = 1.0

0.5

0.2

0.1

PBYR1045CTD

Rs = 0.034 Ohms

Vo = 0.43 V

D =

Tmb(max) / C

150

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

155.5

141

146.5

132

137.5

100

0.1

0.01

Reverse current, IR (mA)

Reverse voltage, VR (V)

PBYR645CT

50 C

75 C

100 C

Tj = 25 C

125 C

2345

a = 1.57

1.9

2.2

2.8

PBYR1045CTD

Rs = 0.034 Ohms

Vo = 0.43 V

Tmb(max) / C

150

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

155.5

141

146.5

132

137.5

100

1000

100

Cd / pF

VR / V

PBYR645CT

0.2

0.4

0.6

0.8

1.2

1.4

BYV118

Forward voltage, VF (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

0.01

0.1

BYV118

1us

10us

100us

1ms

10ms

100ms

10s

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

July 1998

Rev 1.200

PBYR1040CTD Datasheet(PDF) 3 Page - NXP Semiconductors

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