Philips Semiconductors

Product specification

Rectifier diodes

PBYR7025WT series

Schottky barrier

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V

• Reverse surge capability

• High thermal cycling performance

I

• Low thermal resistance

V

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Dual, common cathode schottky

PIN

DESCRIPTION

rectifier

diodes

in

a

plastic

envelope. Intended for use as

1

anode 1 (a)

output rectifiers in low voltage, high

frequency switched mode power

2

cathode (k)

supplies.

3

anode 2 (a)

The

PBYR7025WT

series

is

supplied in the conventional leaded

tab

cathode

SOT429 (TO247) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-20

-25

V

RRM

Repetitive peak reverse voltage

-

20

25

V

V

RWM

Crest working reverse voltage

-

20

25

V

V

R

Continuous reverse voltage

T

-

20

25

V

I

O(AV)

Average output current (both

square wave;

δ = 0.5;

-

70

A

diodes conducting)

T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

70

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

500

A

current, per diode

t = 8.3 ms

-

550

A

sinusoidal T

to surge; with reapplied

V

RRM(max)

I

RRM

Repetitive peak reverse current t

-

2

A

per diode

I

RSM

Non-repetitive peak reverse

t

2

A

current per diode

T

stg

Storage temperature

-65

150

˚C

T

j

Operating junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction to

per diode

-

-

0.9

K/W

mounting base

both diodes

-

-

0.65

K/W

R

th j-a

Thermal resistance junction to

in free air

-

45

-

K/W

ambient

k

a1

a2

13

2

2

3

1

December 1998

1

Rev 1.000