PBYR725D datasheet(3/5 Pages) PHILIPS

3 / 5 page

Philips Semiconductors

Product specification

Rectifier diodes

PBYR725D series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV));

sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current; I

R = f(VR);

parameter T

Fig.5. Typical junction capacitance; C

d = f(VR);

f = 1 MHz; T

j = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-mb = f(tp).

468

0.5

0.2

0.1

PBYR725D

Rs = 0.016 Ohms

Vo = 0.28 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

D =

D = 1.0

Tmb(max) / C

150

147

144

141

138

135

132

1uA

10uA

100uA

1mA

10mA

100mA

PBYR725D

Reverse voltage, VR (V)

Reverse current, IR (A)

50 C

75 C

100 C

125 C

Tj = 25 C

0123456

1.9

2.2

2.8

PBYR725D

Rs = 0.016 Ohms

Vo = 0.28 V

a = 1.57

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

147

144

141

138

100

1000

10000

PBYR725D

Reverse voltage, VR (V)

Junction capacitance, Cd (pF)

0.2

0.4

0.6

0.8

PBYR725D

Forward voltage, VR (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYL1025

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

February 1998

Rev 1.000

PBYR725D Datasheet(PDF) 3 Page - NXP Semiconductors

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