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PBYR740 Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PBYR740
Description  Rectifier diodes Schottky barrier
PDF  5 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR740 Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 7.5 A
• Low thermal resistance
V
F ≤ 0.57 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope. Intended for use as
output rectifiers in low voltage, high
1
cathode
frequency switched mode power
supplies.
2
anode
The PBYR745 series is supplied in
tab
cathode
the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
40
45
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 114 ˚C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 136 ˚C
-
7.5
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 136 ˚C
-
15
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
3
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
k
a
12
1
tab
2
November 1998
1
Rev 1.300


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