PBYR745B datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR745B, PBYR745D series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV));

sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current; I

R = f(VR);

parameter T

Fig.5. Typical junction capacitance; C

d = f(VR);

f = 1 MHz; T

j = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-mb = f(tp).

468

D = 1.0

0.5

0.2

0.1

PBYR745

Rs = 0.02 Ohms

Vo = 0.42 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) (C)

150

147

144

141

138

135

132

129

126

D =

100

0.1

0.01

Reverse current, IR (mA)

Reverse voltage, VR (V)

PBYR745

50 C

75 C

100 C

125 C

Tj = 25 C

0123456

a = 1.57

1.9

2.2

2.8

PBYR745

Rs = 0.02 Ohms

Vo = 0.42 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

150

147

144

141

138

135

132

Tmb(max) / C

129

126

100

1000

100

Cd / pF

VR / V

PBYR745

0.2

0.4

0.6

0.8

1.2

1.4

PBYR745

Forward voltage, VF (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

0.01

0.1

PBYR745

1us

10us

100us

1ms

10ms

100ms

10s

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

July 1998

Rev 1.200

PBYR745B Datasheet(PDF) 3 Page - NXP Semiconductors

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