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PBYR740B Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PBYR740B
Description  Rectifier diodes Schottky barrier
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR740B Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B, PBYR745D series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 7.5 A
• Low thermal resistance
V
F ≤ 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,
high frequency switched mode power supplies.
The PBYR745B series is supplied in the SOT404 surface mounting package.
The PBYR745D series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
1
no connection
2
cathode
1
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
40B
45B
PBYR7
40D
45D
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 114 ˚C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 136 ˚C
-
7.5
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 136 ˚C
-
15
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
PBYR7..B
-
135
A
current
t = 8.3 ms
-
150
A
t = 10 ms
PBYR7..D
-
100
A
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.
k
a
tab
3
1
2
3
tab
13
tab
2
July 1998
1
Rev 1.200


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