AS2 datasheet(1/1 Pages) ZETEX

Part #	AS2

Description	SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR

PDF	1 Pages

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT89 NPN SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 3 – JANUARY 1996

FEATURES

*

Fast Switching

*

High h

FE

PARTMAKING DETAIL —

AS2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

10

V

Pea Pulse Current

ICM

1.5

A

Continuous Collector Current

IC

500

mA

Base Current

IB

100

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

80

V

IC=10µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

60

V

IC=10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

10

V

IE=10µA, IC=0

Emitter Cut-Off Current

IEBO

10

µA

VEB=8V, IE=0

Collector-Emitter

Cut-Off Current

ICES

10

µA

VCE=60V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

1.3

V

IC=500mA, IB=0.5mA

Tj=150°C

Base-Emitter

Saturation Voltage

VBE(sat)

1.9

V

IC=500mA, IB=0.5mA

Static Forward Current

Transfer Ratio

hFE

1K

2K

IC=150mA, VCE=10V*

IC=-500mA, VCE=-10V*

Turn On Time

ton

400 Typical

ns

IC=500mA

IBon=IBoff=0.5mA

Turn Off Time

toff

1.5K Typical

ns

* Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

For typical graphs see FMMT38A datasheet

BST51

C

B

E

SOT89

3 - 79

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