FMMT4124 datasheet(1/1 Pages) ZETEX

Part #	FMMT4124

Description	SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT23 NPN SILICON PLANAR

SWITCHING TRANSISTOR

ISSUE 2 MARCH 94

7

PARTMARKING DETAIL

ZC

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

30

V

IC=10µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

25

V

IC=1mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=10µA

Collector Cut-Off Current

ICBO

50

nA

VCB=20V

Emitter Cut-Off Current

IEBO

50

nA

VEB=3V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.3

V

IC=50mA, IB=5mA*

Base-Emitter

SaturationVoltage

VBE(sat)

0.95

V

IC=50mA, IB=5mA*

Static Forward

Current Transfer Ratio

hFE

120

60

360

IC=2mA, VCE=1V*

IC=50mA, VCE=1V*

Transistion Frequency

fT

300

MHz

IC=10mA, VCE=20V, f=100MHz

Output Capacitance

Cobo

4pF

VCB=5V, IE=0, f=140KHz

Input Capacitance

Cibo

8pF

VBE=0.5V, IE=0, f=140KHz

Noise Figure

N

6

dB

IC=200µA, VCE=5V, Rg=2kΩ

f=30Hz to 15KHz at 3dB points

Small Signal Current

Transfer

hfe

120

480

IC=2mA, VCE=1V, f=1KHz

SWITCHING CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

TYP.

UNIT

CONDITIONS

Delay Time

td

24

ns

VCC=3V, VBE(off)=0.5V

IC=10mA, IB1=1mA

Rise Time

tr

13

ns

Storage Time

ts

125

ns

VCC=3V, IC=10mA

IB1=IB2=1mA

Fall Time

tf

11

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMT4124

C

B

E

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