FCD2007K datasheet(2/5 Pages) GWSEMI

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Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V (BR) DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =16V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±4.5V, VDS = 0V

±1

µA

VGS =±8V, VDS = 0V

±10

µA

Gate threshold voltage (note 1)

VGS(th)

VDS =VGS, ID =250µA

0.4

Drain-source on-resistance (note 1)

RDS(on)

VGS =4.5V, ID=3A

mΩ

VGS =4.0V, ID =3A

Ω

VGS =3.8V, ID =3A

16.5

Ω

VGS =3.1V, ID =3A

Ω

VGS =2.5V, ID =3A

Ω

Forward tranconductance (note 1)

gFS

VDS =5V, ID =7A

Diode forward voltage(note 1)

VSD

IS=1A, VGS = 0V

DYNAMIC PARAMETERS (note 2)

Input Capacitance

Ciss

VDS =10V,VGS =0V,f =1MHz

1150

Output Capacitance

Coss

185

Reverse Transfer Capacitance

Crss

145

Total gate charge

VDS =10V,VGS =4.5V,ID =7A

Gate-source charge

Qgs

0.8

Gate-drain charge

Qgd

3.2

SWITCHING PARAMETERS(note 2)

Turn-on delay time

td(on)

VGS=5V,VDD=10V,

RL=1.35Ω,RGEN=3Ω

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.

2. Guaranteed by design, not subject to production testing.

MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified

12.5

10.5

13.5

14.5

10.8

Drain-Source Diode Characteristics

Diode Forward Current

6.0

FCD2007K

Dual N-Channel MOSFET

FCD2007K Datasheet(PDF) 2 Page - Goodwork Semiconductor Co., Ltd .

FCD2007K Datasheet(HTML) 2 Page - Goodwork Semiconductor Co., Ltd .

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