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BUW23 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUW23
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW23 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon PNP Power Transistor
BUW23
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -400V(Min)
·
DC Current Gain-
: hFE= 20(Min)@ IC= -1A
·
Fast switching speed
·
Large current capacity
APPLICATIONS
·
Power amplifier applications
·
Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
PC
Total Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃


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