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M29F800DB Datasheet(PDF) 43 Page - STMicroelectronics

Part # M29F800DB
Description  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
PDF  53 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29F800DB Datasheet(HTML) 43 Page - STMicroelectronics

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M29F800DT
Common Flash Interface (CFI)
43/53
Table 22.
CFI Query Identification String(1)
1.
Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Address
Data
Description
Value
x16
x8
10h
20h
0051h
"Q"
11h
22h
0052h
Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
0002h
Primary Algorithm Command Set and Control Interface ID
code 16 bit ID code defining a specific algorithm
AMD
Compatible
14h
28h
0000h
15h
2Ah
0040h
Address for Primary Algorithm extended Query table (see
Table 24)
P = 40h
16h
2Ch
0000h
17h
2Eh
0000h
Alternate Vendor Command Set and Control Interface ID
Code second vendor - specified algorithm supported
NA
18h
30h
0000h
19h
32h
0000h
Address for Alternate Algorithm extended Query table
NA
1Ah
34h
0000h
Table 23.
CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
1Bh
36h
0045h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
4.5V
1Ch
38h
0055h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
5.5V
1Dh
3Ah
0000h VPP [Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h VPP [Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0004h Typical timeout per single byte/word program = 2n µs
16µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
NA
21h
42h
000Ah Typical timeout per individual block erase = 2n ms
1s
22h
44h
0000h Typical timeout for full chip erase = 2n ms
see note(1)
1.
Not supported in the CFI
23h
46h
0004h Maximum timeout for byte/word program = 2n times typical
256µs
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h Maximum timeout for chip erase = 2n times typical
see note(1)



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