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2SB907-252 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB907-252
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB907-252 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon PNP Power Transistor
2SB907
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·
DC Current Gain-
: hFE= 2000(Min)@ IC= -1A
·
Fast switching speed
·
Large current capacity
·
Complementary to 2SD1222
APPLICATIONS
·
Power amplifier applications
·
Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
IB
Base current
-0.3
A
PC
Total Power Dissipation
@ TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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