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2SD1815 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1815 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Silicon NPN Power Transistor 2SD1815 www.iscsemi.com 1 FEATURES ·High current capacity ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS · Strobes,voltage regulators,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 6 A PC Collector Power Dissipation @ TC=25℃ 20 W Collector Power Dissipation @ Ta=25℃ 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - 2SD1815 |
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Similar Description - 2SD1815 |
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