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2SD2118-252 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2118-252 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor 2SD2118 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA 1.0 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 6 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.5 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 uA hFE DC Current Gain IC= 0.5A; VCE= 2V 120 390 COB Output Capacitance IE= 0; VCB= 20V; f= 1.0MHz 30 pF fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 6V 150 MHz hFE-1 Classifications Q R 120-270 180-390 |
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