GaAs SPDT Switch

DC - 2.5 GHz

MASWSS0157

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whatsoever arising out of the use or application of any product(s) or

information.

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V3

2

RoHS

Compliant

3

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

DC - 0.1 GHz

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

dB

dB

dB

dB

—

—

—

—

0.4

0.4

0.5

0.6

—

—

0.8

—

Isolation

DC - 0.1 GHz

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

dB

dB

dB

dB

—

—

30

—

56

43

33

24

—

—

—

—

VSWR

DC - 2.0 GHz

Ratio

—

1.4:1

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

—

2

—

Ton, Toff

50% Control to 90% RF, 50% Control to 10% RF

nS

—

4

—

Transients

In-Band

mV

—

15

—

1 dB Compression Point

Input Power, 0.05 GHz

Input Power, 0.5 - 2.0 GHz

dBm

dBm

—

—

21

27

—

—

2nd Order Intercept

Measured Relative to Input Power

(for two-tone input power up to +6 dBm)

0.05 GHz

0.5 - 2.0 GHz

dBm

dBm

—

—

55

68

—

—

3rd Order Intercept

Measured Relative to Input Power

(for two-tone input power up to +6 dBm)

0.05 GHz

0.5 - 2.0 GHz

dBm

dBm

—

—

40

45

—

—

Control Current

Vc = 5 V

µA

—

20

25

3. For positive voltage control, external DC blocking capacitors are required on all RF ports.

Control Inputs

Condition of Switch

RF Common to Each RF

Port

A

B

RF1

RF2

1

0

On

Off

0

1

Off

On

4. 0 = 0 V to -0.2 V, 1 = -5 V to -8 V

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.