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NE685M03 Datasheet(PDF) 1 Page - California Eastern Labs |
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NE685M03 Datasheet(HTML) 1 Page - California Eastern Labs |
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1 / 4 page ![]() NE685M03 NPN SILICON TRANSISTOR • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance • HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz • LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 PART NUMBER NE685M03 EIAJ1 REGISTERED NUMBER 2SC5435 PACKAGE OUTLINE M03 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12 NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 2.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 7 9 hFE2 Forward Current Gain at VCE = 3 V, IC = 10 mA 75 140 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7 ELECTRICAL CHARACTERISTICS (TA = 25°C) PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 1 3 2 1.2±0.05 0.8±0.1 +0.1 -0.05 0.15 1.4 ±0.1 (0.9) 0.59±0.05 0.2±0.1 0.45 0.45 0.3±0.1 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. DESCRIPTION The NEC's NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. California Eastern Laboratories |
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