1999 Apr 29

2

Philips Semiconductors

Product specification

NPN Darlington transistors

PMBTA13; PMBTA14

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 30 V)

• High DC current gain (min. 10000).

APPLICATIONS

• High input impedance preamplifiers.

DESCRIPTION

NPN Darlington transistor in a SOT23 plastic package.

PNP complement: PMBTA64.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

PMBTA13

∗1M

PMBTA14

∗1N

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

MAM298

13

2

1

3

2

TR2

TR1

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

30

V

collector-emitter voltage

−

30

V

emitter-base voltage

open collector

−

10

V

collector current (DC)

−

500

mA

peak collector current

−

800

mA

base current (DC)

−

200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C