PMST2369 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

PMST2369

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

400

IE = 0; VCB =20V; Tj = 125 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−

100

hFE

DC current gain

IC = 10 mA; VCE = 1 V

120

IC = 10 mA; VCE =1V; Tamb = −55 °C20

−

IC = 100 mA; VCE = 2 V; note 1

−

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB =1mA

−

250

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 1 mA

700

850

collector capacitance

IE =ie = 0; VCB = 5 V; f = 1 MHz

−

4pF

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz 500

−

MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = 10 mA; IBon = 3 mA;

IBoff = −1.5 mA

−

delay time

−

4ns

rise time

−

6ns

toff

turn-off time

−

storage time

−

fall time

−

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