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PRLL5817 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PRLL5817 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() 1999 Apr 22 3 Philips Semiconductors Product specification Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage PRLL5817 − 20 V PRLL5818 − 30 V PRLL5819 − 40 V VRSM non-repetitive peak reverse voltage PRLL5817 − 24 V PRLL5818 − 36 V PRLL5819 − 48 V VRRM repetitive peak reverse voltage PRLL5817 − 20 V PRLL5818 − 30 V PRLL5819 − 40 V VRWM crest working reverse voltage PRLL5817 − 20 V PRLL5818 − 30 V PRLL5819 − 40 V IF(AV) average forward current Tamb =60 °C − 1A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge: VR =0 − 25 A Tstg storage temperature −65 +175 °C Tj junction temperature − 125 °C |
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