PRLL5818 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

Schottky barrier diodes

PRLL5817; PRLL5818; PRLL5819

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD87 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

see Fig.2

PRLL5817

IF = 0.1 A

−−

320

IF =1A

−−

450

IF =3A

−−

750

forward voltage

see Fig.2

PRLL5818

IF = 0.1 A

−−

330

IF =1A

−−

550

IF =3A

−−

875

forward voltage

see Fig.2

PRLL5819

IF = 0.1 A

−−

340

IF =1A

−−

600

IF =3A

−−

900

reverse current

VR =VRRMmax; note 1

−

0.5

VR =VRRMmax; Tj = 100 °C

−

510

diode capacitance

VR = 4 V; f = 1 MHz

PRLL5817

−

PRLL5818

−

PRLL5819

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

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