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FDN360P Datasheet(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN360P Datasheet(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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3 / 5 page ![]() Typical Characteristics 0 3 6 9 12 15 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -3.5V -3.0V -4.5V -4.0V -5.0V -6.0V V 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 3 6 9 12 15 -ID, DRAIN CURRENT (A) V GS = -3.5V -6.0V -5.0V -4.0V -10V -4.5V -7.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) I D = -2A V GS = -10V 0.05 0.1 0.15 0.2 0.25 0.3 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -1A TA = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -5.0V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev:2023A2 3 P-Channel 2.5 V (D-S) MOSFET FDN336 Single P-Channel MOSFET |
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