MMBT2222A-G datasheet(2/3 Pages) COMCHIP

2 / 3 page

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

VCE = 10 V, IC = 0.1 mA

—

VCE = 10 V, IC = 1 mA

—

VCE = 10 V, IC = 10 mA

—

DC Current Gain

hFE

VCE = 10 V, IC = 10 mA

———

TA = -55°C

VCE = 10 V, IC = 150 mA

(1)

100

—

300

VCE = 10 V, IC = 500 mA

(1)

—

VCE = 1.0 V, IC = 150 mA

(1)

—

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 10

μA, IE = 0

—

Collector-Emitter Breakdown Voltage(1)

V(BR)CEO

IC = 10 mA, IB = 0

—

Emitter-Base Breakdown Voltage

V(BR)EBO

IC = 10

μA, IC = 0

6.0

—

Collector-Emitter Saturation Voltage(1)

VCEsat

IC = 150 mA, IB = 15 mA

—

0.3

IC = 500 mA, IB = 50 mA

—

1.0

Base-Emitter Saturation Voltage(1)

VBEsat

IC = 150 mA, IB = 15 mA

0.6

—

1.2

IC = 500 mA, IB = 50 mA

—

2.0

Collector Cut-off Current

ICEX

VEB = 3 V, VCE = 60 V

—

VCB = 60 V, IE = 0

—

Collector Cut-off Current

ICBO

VCB = 50 V, IE = 0 V

——

μA

TA = 125°C

Base Cut-off Current

IBL

VEB = 3 V, VCE = 60 V

—

Emitter Cut-off Current

IEBO

VEB = 3 VDC, IC = 0

—

100

Current Gain-Bandwidth Product

VCE = 20 V, IC = 20 mA

300

—

MHz

f = 100 MHz

Output Capacitance

Cobo

VCB = 10 V, f = 1 MHz, IE = 0

—

Input Capacitance

Cibo

VEB = 0.5 V, f = 1 MHz, IC = 0

—

Noise Figure

VCE = 10 V, IC = 100

μA,

—

4.0

RS =1 k

Ω, f = 1 kHz

VCE = 10 V, IC = 1 mA

—

8.0

Input Impedance

hie

f = 1 kHz

VCE = 10 V, IC = 10 mA

0.25

—

1.25

f = 1 kHz

VCE = 10 V, IC = 1 mA,

—

300

Small Signal Current Gain

hfe

f = 1 kHz

—

VCE = 10 V, IC = 10 mA,

—

375

f = 1 kHz

Voltage Feedback Ratio

hre

VCE = 10 V, IC = 1 mA,

—

300

—

f = 1 kHz

—

375

VCE = 10 V, IC = 1 mA,

5.0

—

Output Admittance

hoe

f = 1 kHz

μS

VCE = 10 V, IC = 10 mA,

—

200

f = 1 kHz

Note:

(1) Pulse Test: Pulse width

≤ 300 μs - Duty cycle ≤ 2%

Small Signal Transistor (NPN)

MMBT2222A-G (RoHS Device)

“-G” suffix designated RoHS compliant version

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