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BUF654 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUF654 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon NPN Power Transistor BUF654 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.2V(Max) @IC=2A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current 12 A ICM Collector Peak Current 18 A PC Total Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃ /W 3 2 1 TO-220C Package Pin 1 Base 2 Collector 3 Emitter |
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