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IRLL024N Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRLL024N Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 4 page  IRLL024N N-Ch 60V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25 ℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70 ℃ Continuous Drain Current, VGS @ 10V1 3.5 A IDM Pulsed Drain Current2 30 A EAS Single Pulse Avalanche Energy3 22 mJ IAS Avalanche Current 21 A PD@TA=25 ℃ Total Power Dissipation4 2.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit Thermal Resistance Junction-ambient RθJA 1 --- ℃ 85 /W Thermal Resistance Junction-Case RθJC 1 --- ℃ 45 /W BVDSS RDSON ID 60V 50m Ω 5A Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline The IRLL024N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRLL024N meet the RoHS and Green Product requirement with full function reliability approved. Advanced high cell density Trench technology Description Absolute Maximum Ratings Thermal Data SOT223 Pin Configuration Product Summary Rev:2023A2 1 |
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Similar Description - IRLL024N |
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