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GMR30H60C Datasheet(PDF) 2 Page - Gamma Microelectronics Inc. |
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GMR30H60C Datasheet(HTML) 2 Page - Gamma Microelectronics Inc. |
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2 / 7 page ![]() MARKING INFORMATION TO - 220AB 30H60C AYW W A : Assembly Location Y : Year WW : Weekly Ordering Number Package Shipping GMR30H60CTB3T GMR30H60CTP3T GMR30H60CTBF3T GMR30H60CTPF3T TO - 220AB TO - 220FPAB 50 Unit/ Tube 30 Unit/ Tube 50 Unit/ Tube 30 Unit/ Tube 2 ORDERING INFORMATION TO - 3P 30H60C AYW W TO - 3P TO - 3PF * For detail Ordering Number identification, please see last page. ABSOLUTE RATINGS (T = 25°C) C Symbol Parameter Value Unit VRRM IF(AV) IFSM Repetitive peak reverse voltage per diode per device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per leg.(Non-Repetitive) Operating junction temperature and storage temperature 60 15 30 -45 to + 150 V A A °C T,j Tstg Maximum average forward rectified current 275 A A MICROELECTRONICS GMR30H60C Power Discrete HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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