2 of 12
RF1450
Rev A0 DS070531
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
VBATT
6.0
V
VDD
3.0
V
Maximum Input Power (0GHz to
2GHz, 2.5V Control)
+36
dBm
Operating Temperature
-20 to +85
°C
Storage Temperature
-35 to +100
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Electrical Characteristics
Active Mode: VHIGH>1.3V, VLOW<0.05V;
Temp=25°C; VDD=2.5V to 2.85V
PIN=34.5dBm@0.9GHz or 31dBm@1.8GHz;
All RF ports terminated to ZO=50Ω.
Insertion Loss
0.5GHz to 1.0GHz
0.40
0.55
dB
1.0GHz to 2.0GHz
0.45
0.60
dB
2.1GHz
0.50
0.65
dB
2.5GHz
0.60
0.90
dB
Isolation
0.5GHz to 1.0GHz
27
29
dB
1.0GHz to 2.0GHz
22
24
dB
2.1GHz
21
23
dB
2.5GHz
19
21
dB
RF Port Return Loss
0.5GHz to 2.2GHz
15
dB
All RF ports in Insertion Loss state.
Operating Characteristics
Input Power at 0.1dB
Compression Point
37
dBm
f=0.9GHz
34
dBm
f=1.8GHz
Second Harmonic (2f0)
-80
dBc
f=0.9GHz, PIN=34.5dBm
-85
dBc
f=1.8GHz, PIN=31.5dBm
Third Harmonic (3f0)
-80
dBc
f=0.9GHz, PIN=34.5dBm
-80
dBc
f=1.8GHz, PIN=31.5dBm
IMD
-110
dBm
Fundamental Frequency Power
Level=+20dBm @ 1950MHz
Blocker Power Level=-15dBm @ 1760MHz
Power Handling in
Mismatched Condition
34.5
dBm
VSWR>20; f=0.9GHz
31.0
dBm
VSWR>20; f=1.8GHz
Switching Speed
5
μs
Start-up Time
25
μs
Maximum set up time for the switch to reach
fully compliant operation
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
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