APT5024BVR datasheet(2/4 Pages) ADPOW

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DYNAMIC CHARACTERISTICS

Symbol

iss

oss

rss

d(on)

d(off)

Test Conditions

GS = 0V

DS = 25V

f = 1 MHz

GS = 10V

DD = 0.5 VDSS

D = ID[Cont.] @ 25°C

GS = 15V

DD = 0.5 VDSS

D = ID[Cont.] @ 25°C

G = 1.6Ω

MIN

TYP

MAX

3600

4320

470

660

180

270

140

210

714

UNIT

APT5024BVR_SVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (V

GS = 0V, IS = -ID[Cont.])

Reverse Recovery Time (I

S = -ID[Cont.], dlS/dt = 100A/µs)

Reverse Recovery Charge (I

S = -ID[Cont.], dlS/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

µC

MIN

TYP

MAX

1.3

415

6.6

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 5.00mH, RG = 25Ω, Peak IL = 22A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

θJC

θJA

MIN

TYP

MAX

0.45

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.5

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

Symbol

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