Electronic Components Datasheet Search
  British  ▼
ALLDATASHEET.CO.UK

X  

Preview PDF HTML

APTGF15X60RTP2 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTGF15X60RTP2
Description  Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF15X60RTP2 Datasheet(HTML) 2 Page - Microsemi Corporation

  APTGF15X60RTP2 Datasheet HTML 1Page - Microsemi Corporation APTGF15X60RTP2 Datasheet HTML 2Page - Microsemi Corporation APTGF15X60RTP2 Datasheet HTML 3Page - Microsemi Corporation APTGF15X60RTP2 Datasheet HTML 4Page - Microsemi Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
APTGF15X60RTP2
APTGF15X60BTP2
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGF15X60BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
25
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
80
W
IF
DC Forward Current
TC = 80°C
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
25
IC
Continuous Collector Current
TC = 80°C
15
ICM
Pulsed Collector Current
TC = 25°C
37
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
100
W
SCSOA Short circuit Safe Operating Area
Tj = 125°C
65A @ 360V
IF
DC Forward Current
TC = 80°C
15
IFSM
Surge Forward Current
tp = 1ms
TC = 80°C
30
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
2
mA
IF = 30A
Tj = 25°C
1.3
1.5
VF
Forward Voltage
IF = 15A
Tj = 150°C
0.95
1
V
RthJC
Junction to Case
1
°C/W
IGBT Brake & Diode (only for APTGF15X60BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
0.5
500
µA
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
0.8
mA
Tj = 25°C
1.95
2.35
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 10A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Tj = 25°C
1.25
1.70
VF
Forward Voltage
VGE = 0V
IF = 15A
Tj = 125°C
1.2
V
IGBT
1.5
RthJC
Junction to Case
Diode
1.8
°C/W



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com