2SC4300H datasheet(1/2 Pages) ISC

Part #	2SC4300H

Description	Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC4300H

www.iscsemi.com

1

FEATURES

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 800V(Min)

·

High Switching Speed

DESCRIPTION

·

Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IB

Base Current-Continuous

2.5

A

PC

Collector Power Dissipation

@TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.56

℃

/W

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2SC4300H Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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