APTM10HM09FT3G

www.microsemi.com

1 – 6

11

Q4

14

13

23

Q2

10

8

7

3

4

22

29

31

R1

15

16

32

26

19

18

Q1

Q3

27

30

16

15

18

20

23 22

13

11 12

14

8

7

29

30

28 27 26

3

32

31

10

19

2

25

4

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

Absolute maximum ratings

* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature

greater than 30°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

100

V

139

Continuous Drain Current

100 *

Pulsed Drain current

430

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

10

m

Ω

Maximum Power Dissipation

390

W

Avalanche current (repetitive and non repetitive)

100

A

Repetitive Avalanche Energy

50

Single Pulse Avalanche Energy

3000

mJ

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

-

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

•

RoHS compliant

Full - Bridge

MOSFET Power Module