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IXFN55N50 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFN55N50 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISFM1249 eq IXFN55N50 N-Channel MOSFET Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA 500 - - V VGS(th) Gate Threshold Voltage VDS=VGS; ID =8mA 2.5 - 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 27.5A - - 90 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V - - ±200 nA IDSS Drain-Source Leakage Current VDS= 500V; VGS= 0V - - 25 μ A VSD Diode Forward Voltage ISD= 100A, VGS= 0V - - 1.5 V PACKAGE OUTLINE (UNIT: mm) |
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