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IRLL024NQ Datasheet(PDF) 2 Page - International Rectifier |
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IRLL024NQ Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLL024NQ 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) Q p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.9A, VGS = 0V R trr Reverse Recovery Time ––– 40 60 ns TJ = 25°C, IF = 1.9A Qrr Reverse Recovery Charge ––– 65 97 nC di/dt = 100A/µs R Source-Drain Ratings and Characteristics A 12 ––– ––– ––– 3.1 ––– Q Repetitive rating; pulse width limited by max. junction temperature. Notes: R Pulse width ≤ 400µs; duty cycle ≤ 2%. S Surface mounted on 1 in square Cu board T Starting T J = 25°C, L = 18mH RG = 25Ω, IAS = 3.1A. (See Figure 12). U I SD ≤ 1.9A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C VLimited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.065 VGS = 10V, ID = 3.1A R ––– ––– 0.080 VGS = 5.0V, ID = 2.5A R VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 4.5 ––– ––– SVDS = 25V, ID = 1.9A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– 11 17 ID = 1.9A Qgs Gate-to-Source Charge ––– 1.9 ––– nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 4.3 ––– VGS = 10V td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V R tr Rise Time ––– 41 ––– ID = 1.9A td(off) Turn-Off Delay Time ––– 48 ––– RG = 24Ω tf Fall Time ––– 39 ––– RD = 15Ω Ciss Input Capacitance ––– 508 ––– VGS = 0V Coss Output Capacitance ––– 141 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 62 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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