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NAND512R3A2C Datasheet(PDF) 23 Page - STMicroelectronics

Part # NAND512R3A2C
Description  512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PDF  51 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND512R3A2C Datasheet(HTML) 23 Page - STMicroelectronics

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NAND512-A2C
Device operations
23/51
6.3
Page Program
The Page Program operation is the standard operation to program data to the memory
array.
The main area of the memory array is programmed by page, however partial page
programming is allowed where any number of bytes (1 to 528) or words (1 to 264) can be
programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is three. After exceeding this a Block Erase command must be issued before any
further program operations can take place in that page.
Before starting a Page Program operation a Pointer operation can be performed to point to
the area to be programmed. Refer to the Section 6.1: Pointer operations and Figure 7 for
details.
Each Page Program operation consists of five steps (see Figure 10):
1.
One bus cycle is required to setup the Page Program command
2.
Four bus cycles are then required to input the program address (refer to Table 6 and
Table 7)
3.
The data is then input (up to 528 Bytes/ 264 Words) and loaded into the Page Buffer
4.
One bus cycle is required to issue the confirm command to start the P/E/R Controller.
5.
The P/E/R Controller then programs the data into the array.
Once the program operation has started the Status Register can be read using the Read
Status Register command. During program operations the Status Register will only flag
errors for bits set to '1' that have not been successfully programmed to '0'.
During the program operation, only the Read Status Register and Reset commands will be
accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High.
The device remains in Read Status Register mode until another valid command is written to
the Command Interface.
Figure 10.
Page Program operation
1.
Before starting a Page Program operation a Pointer operation can be performed. Refer to Section 6.1: Pointer operations
for details.
I/O
RB
Address Inputs
SR0
ai07566
Data Input
10h
70h
80h
Page Program
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH2
(Program Busy time)



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