50N06-Q

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-C76.a



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

60

V

Drain-Source Leakage Current

IDSS

VDS = 60V, VGS = 0V

10

μA

Gate- Source Leakage Current

Forward

IGSS

VGS = 20V, VDS = 0V

100

nA

Reverse

VGS = -20V, VDS = 0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS = VGS, ID = 250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10V, ID = 25A

27

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

1293.1

pF

Output Capacitance

COSS

310.5

pF

Reverse Transfer Capacitance

CRSS

26.8

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=48V, VGS=10V, ID=50A

IG=1mA (Note 1, 2)

29.3

nC

Gate-Source Charge

QGS

8.8

nC

Gate-Drain Charge

QGD

6.4

nC

Turn-On Delay Time (Note 1)

tD(ON)

VDS=30V, VGS=10V, ID=50A,

RG=3Ω (Note 1, 2)

7.6

ns

Turn-On Rise Time

tR

16.3

ns

Turn-Off Delay Time

tD(OFF)

21.2

ns

Turn-Off Fall Time

tF

16.4

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain-Source Diode

Forward Current

IS

25

A

Maximum Pulsed Drain-Source Diode Forward

Current

ISM

100

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=50A , VGS=0V

1.4

V

Reverse Recovery Time (Note 1)

trr

IS=30A , VGS=0V

di/dt=100A/μs

72

ns

Reverse Recovery Charge

Qrr

189

nC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.