UDF015N120

Advance

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-D146.a



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (Note 2)

VDSS

1200

V

Drain-Gate Voltage (Note 2)

VDGX

1200

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

ID

0.15

A

Pulsed

IDM

0.3

A

Power Dissipation

SOT-223

PD

0.8

W

TO-92

0.625

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. TJ=+25°C~+150°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

θJA

150

°C/W

TO-92

200

°C/W



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=-5V

1200

V

Drain-Source Leakage Current

ID(OFF)

VDS=1200V, VGS=-5V

0.1

μA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

nA

Reverse

VGS=-20V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate to Source Cut Off Voltage

VGS(OFF)

VDS=3V, ID=8µA

-2.0

-4.5

V

Drain-Source Leakage Current

IDSS

VDS=25V, VGS=0V

30

mA

Static Drain-Source On-State Resistance

RDS(ON)

VGS=0V, ID=75mA

500

Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

ISD=3.0mA, VGS=-10V

1

V

Note: 1. Repetitive rating, pulse width limited by maximum junction temperature.

2. Pulse width ≤ 380μs; duty cycle ≤ 2%.