6N100L-TN3-R datasheet(4/9 Pages) UTC

4 / 9 page

6N100-FC

Power MOSFET

UNISONIC TECHNOLOGIES CO.,LTD

4 of 9

www.unisonic.com.tw

QW-R205-517.B



ELECTRICAL CHARACTERISTICS (T

J =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250

μA

1000

Drain-Source Leakage Current

IDSS

VDS=1000V, VGS=0V

μA

Gate-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250

μA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3.0A

4.0

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1MHz

945

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

1.9

SWITCHING CHARACTERISTICS

Total Gate Charge

VDS=800V, VGS=10V, ID=6A

IG=1mA (Note 1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QDD

1.5

Turn-On Delay Time

tD(ON)

VDD=100V, VGS=10V, ID =6A,

RG =25

Ω (Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=6A, VGS=0V

1.4

Body Diode Reverse Recovery Time

trr

IS=6A, VGS=0V, dIF/dt=100A/µs

900

Body Diode Reverse Recovery Charge

Qrr

10.6

μC

Notes: 1. Pulse Test: Pulse width

≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

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