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CS210N4A Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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CS210N4A Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 6 page ![]() R CS210N4A 版本:202102C 2/6 绝对最大额定值 ABSOLUTE RATINGS (TC=25℃) 项 目 Parameter 符 号 Symbol 试 验 条 件 Condition 数 值 Value 单位 Unit 重复峰值断态电压 Repetitive peak off-state voltage VDRM ±800 V 通态方均根电流 On-state RMS current IT(RMS) full sine wave 2.0 A 非重复浪涌峰值通态电流 Non - repetitive surge peak on-state current ITSM full sine wave ,t=20ms 20 A I2t t=10ms 2.0 A2s 通态电流临界上升率 Repetitive rate of rise of on-state current after triggering dI/dt MT1(-),MT2(+),G(+) ; MT1(-),MT2(+),G(-) ; MT1(+),MT2(-),G(-) ; MT1(+),MT2(-),G(+) ; 50 A/μs 峰值门极功率 Peak gate power PGM 1 W 平均门极功率 Average gate power PG(AV) 0.1 W 峰值门极电压 Peak gate voltage VGM 6 V 峰值门极电流 Peak gate current IGM 1 A 存储温度 Storage temperature Tstg -40~150 ℃ 操作结温 Operation junction temperature TVJ -40~125 ℃ |
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