MCP1612T-ISLASHMS datasheet(4/22 Pages) MICROCHIP

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MCP1612

DS21921B-page 4

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VIN – AGND .......................................................................6.0V

(SHDN, FB, VCC, Comp ........... (AGND – 0.3V) to (VIN + 0.3V)

LX to PGND.............................................. -0.3V to (VIN + 0.3V)

PGND to AGND...................................................-0.3V to +0.3V

Output Short Circuit Current ................................. Continuous

Storage temperature .....................................-65°C to +150°C

Ambient Temp. with Power Applied.................-40°C to +85°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM)

....................................... 4kV

ESD protection on all pins (MM)

......................................... 300V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, VIN = VCC = VSHDN = 3.3V, VOUT = 1.8V, CIN = COUT = 10 µF, L = 3.3 µH,

ILOAD = 100 mA, TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Voltage

Input Operating Voltage

VIN

2.7

—

5.5

Input Shutdown Current

I(VIN)

—

0.01

µA

Shutdown mode (SHDN = GND)

Input Quiescent Current

I(VIN)—

ILOAD = 0 mA

Oscillator Characteristics

Internal Oscillator Frequency

FOSC

1.2

1.4

1.6

MHz

Internal Power Swicthes

RDSon P-Channel

RDSon-P

—

300

—

IP = 250 mA

RDSon N-Channel

RDSon-N

—

300

—

IN = 250 mA

LX Pin Leakage Current

ILX

-1

—

µA

SHDN = 0V, VIN = 5.5V, LX = 0V,

LX = 5.5V

Positive Current Limit Threshold

+ILX(MAX)

—2.3

—

Negative Current Limit Threshold

-ILX(MAX)

—-1.4

—

Feedback Characteristics

Transconductance from FB to

COMP

µA/V

Output Voltage

Output Voltage Range

VOUT

0.8

—

VIN

Reference Feedback Voltage

VFB

0.78

0.8

0.82

Feedback Input Bias Current

IVFB

—1

—

Line Regulation

VLINE-REG

—

0.15

0.5

%/V

VIN = 2.7V to 5.5V, ILOAD = 100 mA

Load Regulation

VLOAD-REG

—0.25

—

VIN = 4.2V, ILOAD = 100 mA to 1A

Note

The integrated MOSFET switches have an integral diode from the LX pin to VIN and from LX to PGND. In cases where

these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not

able to regulate the junction temperature for these cases.

UVLO is specified for a falling VIN. Once the UVLO is activated, the UVLO-HYS must be overcome before the device will

return to operation.

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