GE75NF60

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ISSUED DATE :2006/12/01

REVISED DATE :

G

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and

cost-effectiveness device.

The through-hole version (TO-220) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*High Density Cell Design for Ultra Low On-Resistance

*High power and Current handing capability

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.80

c1

1.25

1.45

b

0.76

1.00

b1

1.17

1.47

c

0.36

0.50

L

13.25

14.25

D

8.60

9.00

e

2.54 REF.

E

9.80

10.4

L1

2.60

2.89

L4

14.7

15.3

Ø

3.71

3.96

L5

6.20

6.60

A1

2.60

2.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±25

V

Continuous Drain Current

75

A

Continuous Drain Current

56

A

200

A

Total Power Dissipation

268

W

Linear Derating Factor

1.78

W/ :

350

mJ

Single Pulse Avalanche Current

38

A

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +175

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-case

0.56

: /W

Thermal Resistance Junction-ambient

Max.

Rthj-amb

60

/

: W

60V

12m

75A

Pb Free Plating Product