GP4435

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ISSUED DATE :2005/03/02

REVISED DATE :

G

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GP4435 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

-

0.5334

c1

0.203

0.279

A1

0.381

-

D

9.017

10.16

A2

2.921

4.953

E

6.096

7.112

b

0.356

0.559

E1

7.620

8.255

b1

0.356

0.508

e

2.540 BSC

b2

1.143

1.778

HE

-

10.92

b3

0.762

1.143

L

2.921

3.810

c

0.203

0.356

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

f 20

V

Continuous Drain Current

-9

A

Continuous Drain Current

-5.8

A

-50

A

Total Power Dissipation

2.5

W

Linear Derating Factor

0.02

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-amb

50

/W

-30V

20m

-9A

Pb Free Plating Product

SEATING PLANE

e

b

Z

Z

D

SECTION Z - Z

b

GAUGE PLANE

DIP-8