GP5936 datasheet(2/4 Pages) GTM

2 / 4 page

GP5936

Page: 2/4

ISSUED DATE :2005/11/14

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-40

VGS=0, ID=-250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

-0.03

V/ :

Reference to 25 : , ID=-1mA

Gate Threshold Voltage

VGS(th)

-1.0

-3.0

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

VDS=-10V, ID=-5.5A

Gate-Source Leakage Current

IGSS

±100

VGS= ±25V

Drain-Source Leakage Current(Tj=25 : )

-1

VDS=-40V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-25

VDS=-32V, VGS=0

VGS=-10V, ID=-5.5A

Static Drain-Source On-Resistance2

RDS(ON)

VGS=-4.5V, ID=-4A

Total Gate Charge2

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Change

Qgd

ID=-6A

VDS=-32V

VGS=-4.5V

Turn-on Delay Time2

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS=-20V

ID=-1A

VGS=-10V

RG=3.3

RD=20

Input Capacitance

Ciss

1600

2560

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

190

VGS=0V

VDS=-25V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-1.2

IS=-2A, VGS=0V

Reverse Recovery Time2

Trr

Reverse Recovery Charge

Qrr

IS=-6A, VGS=0V

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Mounted on 1 in2 copper pad of FR4 board; 90 /W when mounted on Min. copper pad.

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