GS7407 datasheet(2/4 Pages) GTM

2 / 4 page

GS7407

Page: 2/4

ISSUED DATE :2006/08/15

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID=-250uA

Gate Threshold Voltage

VGS(th)

-0.3

-1.0

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

VDS=-5V, ID=-3A

Gate-Source Leakage Current

IGSS

±100

VGS= ±8V

Drain-Source Leakage Current(Tj=25 : )

-1

VDS=-16V, VGS=0

Drain-Source Leakage Current(Tj=55 : )

IDSS

-5

VDS=-16V, VGS=0

135

VGS=-4.5V, ID=-1.2A

170

VGS=-2.5V, ID=-1.0A

Static Drain-Source On-Resistance

RDS(ON)

220

VGS=-1.8V, ID=-1.0A

Total Gate Charge2

6.2

Gate-Source Charge

Qgs

0.54

Gate-Drain (“Miller”) Change

Qgd

1.44

ID=-1.0A

VDS=-10V

VGS=-4.5V

Turn-on Delay Time2

Td(on)

Rise Time

10.7

Turn-off Delay Time

Td(off)

Fall Time

28.7

VDS=-10V

VGS=-4.5V

RG=3

RL=15

Input Capacitance

Ciss

540

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS=0V

VDS=-10V

f=1.0MHz

Gate Resistance

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-1.0

IS=-1.0A, VGS=0V

Reverse Recovery Time2

Trr

24.5

Reverse Recovery Charge

Qrr

17.4

IS=-1A, VGS=0V

dI/dt=100A/ s

Continuous Source Current (Body Diode)

-0.6

VD=VG=0V, VS=-1.0V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t

10sec.

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