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1SS286 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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1SS286 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page ![]() 1SS286 REJ03G0142-0300 Rev.3.00 May 24, 2007 Page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Reverse voltage VR 25 V Forward current IF 35 mA Power dissipation Pd 150 mW Junction temperature Tj 100 °C Storage temperature Tstg −55 to +100 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.60 V IF = 10 mA Reverse voltage VR 25 — — V IF = 10 µA Reverse current IR — — 10 nA VR = 10 V Capacitance C — — 1.20 pF VR = 0 V, f = 1 MHz Capacitance deviation *3 ∆C — — 0.10 pF VR = 0 V, f = 1 MHz Forward voltage deviation *3 ∆V F — — 10 mV IF = 10mA ESD-Capability *1 — 10 — — V C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes 3. Not applied to taping-type products. |
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