HAF2012S datasheet(4/10 Pages) RENESAS

4 / 10 page

HAF2012(L), HAF2012(S)

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 4 of 9

Main Characteristics

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

468

012345

100

150

200

VDS = 10 V

Pulse Test

10 V

4 V

5 V

6 V

8 V

3.5 V

VGS = 3 V

Pulse Test

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0

0.4

0.8

1.2

1.6

Pulse Test

ID = 20 A

5 A

10 A

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

0.1

0.05

0.02

0.01

520

100 200

0.5

0.2

VGS = 4 V

10 V

Pulse Test

75°C

Tc = –25°C

25°C

500

100

200

0.5

0.3

0.3 0.5

50 100

Ta = 25

°C

µs

100

µs

1 ms

Operation

(Tc

°C)

Operation in this area

is limited by RDS (on)

Thermal shut down

Operation area

HAF2012S Datasheet(PDF) 4 Page - Renesas Technology Corp

HAF2012S Datasheet(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL