GSMBT8550 datasheet(1/2 Pages) GTM

Part #	GSMBT8550

Description	PNP EPITAXIAL TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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GSMBT8550

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :

G

G S

S M

M B

B T

T 88555500

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT8550 is designed for general purpose amplifier applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

-25

V

Collector to Emitter Voltage

VCEO

-20

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current

IC

-700

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics(Ta = 25 : ,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-25

-

V

IC=-10uA, IE=0

BVCEO

-20

-

V

IC=-1mA, IB=0

BVEBO

-5

-

V

IE=-10uA, IC=0

ICBO

-

-1

uA

VCB=-20V, IE=0

IEBO

-

-100

nA

VEB=-5V, IC=0

VCE(sat)

-

-500

mV

IC=-500mA, IB=-50mA

VBE(on)

-

-1

V

VCE=-1V, IC=-150mA

hFE

100

-

500

VCE=-1V, IC=-150mA

fT

150

-

MHz

VCE=-10V, IC=-20mA, f=100MHz

Cob

-

10

pF

VCB=-10V, f=1MHz

Classification Of hFE

Rank

B9C

B9D

B9E

Range

100 ~ 200

150 ~ 300

250 ~ 500

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