GSS6982

Page: 1/7

ISSUED DATE :2006/04/24

REVISED DATE :

G

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low On-resistance

*Fast Switching

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

M

0.10

0.25

B

4.80

5.00

H

0.35

0.49

C

3.80

4.00

L

1.35

1.75

D

0°

8°

J

0.375 REF.

E

0.40

0.90

K

45°

F

0.19

0.25

G

1.27 TYP.

Absolute Maximum Ratings

Ratings

Parameter

Symbol

CH-1

CH-2

Unit

Drain-Source Voltage

30

30

V

Gate-Source Voltage

±25

±25

V

8.5

7.3

A

6.8

5.8

A

30

30

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-a

62.5

/

: W

Pb Free Plating Product

30V

8.5A

30V

7.3A